Display panel and mobile terminal

ABSTRACT

The present application provides a display panel and a mobile terminal. A light sensing module of the display panel includes a dual-gate transistor, which includes a first gate connected to a first control signal end, a second gate connected to a second control signal end, a first electrode connected to a first power-supply end, and a second electrode connected to a read-out module. The light sensing module further includes a first storage capacitor, which includes a first electrode plate connected to one of the first control signal end or the second control signal end, and a second electrode plate connected to the read-out module.

FIELD OF THE DISCLOSURE

The present invention relates to display technologies, and moreparticularly to a display panel and a mobile terminal.

DESCRIPTION OF RELATED ARTS

With development of display technologies, a remote interactiontechnology that integrates light control sensors into a display paneland uses laser as a source for control operations attracts people'sattention.

FIG. 1 is a circuit diagram of an existing light control sensor 100.FIG. 2 is a film structure diagram of an existing light control sensor.The existing light control sensor 100 includes a light sensingtransistor T1, a switch transistor T2, a storage capacitor Cst and areadout module. The gate of the light sensing transistor T1 is connectedto a first control source SVGG, the source of the light sensingtransistor T1 is connected to power supply SVDD, the drain of the lightsensing transistor T1 is connected to one end of the storage capacitorCst and the source of the switch transistor T2. The second end of thestorage capacitor Cst is connected to the first control source SVGG. Thegate of the switch transistor T2 is connected to a second control sourceGate, and the drain of the switch transistor T2 is connected to areadout circuit.

With reference to the structures of FIG. 1 and FIG. 2 , the switchtransistor T2 and the light sensing transistor T1 are separate, and thedrains and sources of the two transistors are connected via a metallayer. Therefore, the two non-transparent transistors of the existinglight control sensor 100 occupy a relatively large display area in asub-pixel. This reduces the aperture ratio of the display panel.

Therefore, there is an urgent need for a display panel to solve aboveproblems.

SUMMARY Technical Problems

The present application provides a display panel and a mobile terminal,for solving the problem of low aperture ratio of the existing displaypanel.

Technical Solutions

The present application provides a display panel, including a lightsensing module and a read-out module connected to the light sensingmodule, the light sensing module including:

-   -   a dual-gate transistor, including a first gate connected to a        first control signal end and a second gate connected to a second        control signal end, a first electrode of the dual-gate        transistor connected to a first power-supply end, a second        electrode of the dual-gate transistor connected to the read-out        module; and    -   a first storage capacitor, a first electrode plate of the first        storage capacitor connected to one of the first control signal        end or the second control signal end, a second electrode plate        of the first storage capacitor connected to the read-out module.

In the display panel of the present application, the display panelincludes:

-   -   a first metal layer, including the first gate forming the        dual-gate transistor;    -   an active layer, disposed on the first metal layer;    -   a second metal layer, disposed on the active layer, the second        metal layer including the first electrode and the second        electrode forming the dual-gate transistor; and    -   a third metal layer, disposed above the second metal layer, the        third metal layer including the second gate forming the        dual-gate transistor.

In the display panel of the present application, the first electrodeplate and one of the first metal layer or the third metal layer aredisposed in a same layer, and the second electrode plate and the secondmetal layer are disposed in a same layer.

In the display panel of the present application, the light sensingmodule further includes a second storage capacitor, and the secondstorage capacitor including a third electrode plate and a fourthelectrode plate,

-   -   wherein the third electrode plate is connected to the other one        of the first control signal end or the second control signal        end, and the fourth electrode plate is connected to the read-out        module.

In the display panel of the present application, the third electrodeplate and the other one of the first metal layer or the third metallayer are disposed in a same layer, and the fourth electrode plate andthe second electrode plate are shared.

In the display panel of the present application, among the first storagecapacitor and the second storage capacitor, capacitance of the storagecapacitor located away from the first metal layer is greater thancapacitance of the storage capacitor located close to the first metallayer.

In the display panel of the present application, the display panelincludes:

-   -   a first gate insulating layer, disposed between the first metal        layer and the second metal layer; and    -   a second gate insulating layer, disposed between the second        metal layer and the third metal layer,    -   wherein the first electrode plate, the first gate insulating        layer, the second electrode plate, the second gate insulating        layer and the third electrode plate are made of transparent        material.

In the display panel of the present application, the first metal layerfurther includes:

-   -   a gate transmission portion, disposed in a same layer as the        first gate, the second gate electrically connected to the gate        transmission portion via a wire switching hole.

In the display panel of the present application, the read-out moduleincludes:

-   -   an operational amplifier, including an inverting input end, a        non-inverting input end and an output end, the non-inverting        input end connected to a voltage comparing end, the inverting        input end connected to the second electrode of the dual-gate        transistor and the second electrode plate of the first storage        capacitor;    -   a read-out capacitor, connected in parallel with the operational        amplifier; and    -   a first switch, connected in parallel with the operational        amplifier and the read-out capacitor,    -   wherein a first end of the read-out capacitor is connected to a        first end of the first switch and the inverting input end of the        operational amplifier, and a second end of the read-out        capacitor is connected to a second end of the first switch and        the output end of the operational amplifier.

The present application further provides a mobile terminal, including aterminal body and the afore-described display panel. The terminal bodyand the display panel are combined as one.

BENEFICIAL EFFECTS

In the present application, the dual-gate transistor including the firstgate and the second gate, and the source and the drain sharing a commonactive layer is provided on the display panel. The dual-gate transistorcan realize the functions of the light sensing transistor and the switchtransistor in different time periods. This reduces the area of the lightsensing module and improves the aperture ratio of the display panel.

DESCRIPTION OF DRAWINGS

FIG. 1 is a circuit diagram of an existing light control sensor.

FIG. 2 is a film structure diagram of an existing light control sensor.

FIG. 3 is a first type of circuit diagram of a light sensing module in adisplay panel of the present application.

FIG. 4 is a second type of circuit diagram of a light sensing module ina display panel of the present application.

FIG. 5 is a third type of circuit diagram of a light sensing module in adisplay panel of the present application.

FIG. 6 is a timing diagram of the light sensing module in FIGS. 3 to 5 .

FIG. 7 is a first type of film structure diagram of a light sensingmodule in a display panel of the present application.

FIG. 8 is a second type of film structure diagram of a light sensingmodule in a display panel of the present application.

FIG. 9 is a third type of film structure diagram of a light sensingmodule in a display panel of the present application.

DESCRIPTION OF EMBODIMENTS OF THE DISCLOSURE

To make the objectives, technical schemes, and effects of the presentapplication more clear and specific, the present application isdescribed in further detail below with reference to the embodiments inaccompanying with the appending drawings. It should be understood thatthe specific embodiments described herein are merely for interpretingthe present application and the present application is not limitedthereto.

Referring to FIGS. 3 to 5 , the present application provides a displaypanel 200, which includes a light sensing module 300 and a read-outmodule 400 connected to the light sensing module 300. The light sensingmodule 300 includes:

-   -   a dual-gate transistor 500, including a first gate 31 connected        to a first control signal end GE1 and a second gate 81 connected        to a second control signal end GE2, a first electrode 61 of the        dual-gate transistor 500 connected to a first power-supply end        SVDD, a second electrode 62 of the dual-gate transistor        connected to the read-out module 400; and    -   a first storage capacitor C1, a first electrode plate 33 of the        first storage capacitor C1 connected to one of the first control        signal end GE1 or the second control signal end GE2, a second        electrode plate 63 of the first storage capacitor C1 connected        to the read-out module 400.

It should be noted that the first electrode 61 of the dual-gatetransistor 500 is one of a drain or a source, and the second electrode62 of the dual-gate transistor 500 is the other one of the drain or thesource. For example, the first electrode 61 is the source of thedual-gate transistor 500, and the second electrode 62 is the drain ofthe dual-gate transistor 500.

It should be noted that the first gate 31, the first electrode 61 andthe second electrode 62 may constitute a switch transistor, and thesecond gate 81, the first electrode 61 and the second electrode 62 mayconstitute a light sensing transistor. A combination of the lightsensing transistor and the switch transistor forms the dual-gatetransistor 500 with both light sensing and switching functions.

In the present embodiment, referring to FIG. 3 , the first electrodeplate 33 of the first storage capacitor C1 can be connected to the firstcontrol signal end GE1, and the second electrode plate 63 of the firststorage capacitor C1 can be connected to the read-out module 400.Referring to FIG. 4 , the first electrode plate 33 of the first storagecapacitor C1 can be connected to the second control signal end GE2, andthe second electrode plate 63 of the first storage capacitor C1 can beconnected to the read-out module 400.

In the present embodiment, the light sensing modules 300 are disposed insub-pixels of the display panel 200 and are configured to sense changesof light intensity to realize touch sensing, fingerprint recognition,and optical interaction over distance, and so on.

In the present embodiment, referring to FIGS. 3 and 4 , the read-outmodule 400 may include an operational amplifier 600, a read-outcapacitor Cint and a first switch Switch. The operational amplifier 600includes an inverting input end, a non-inverting input end and an outputend (as shown in the operational amplifier 600 in FIGS. 3 and 4 , “−”indicates the inverting input end and “+” indicates the non-invertinginput end). The non-inverting input end is connected to a voltagecomparing end Vref. The inverting input end is connected to the secondelectrode 62 of the dual-gate transistor 500 and the second electrodeplate 63 of the first storage capacitor C1. The read-out capacitor Cintis connected in parallel with the operational amplifier 600. The firstswitch Switch is connected in parallel with the operational amplifier600 and the read-out capacitor Cint. A first end of the read-outcapacitor Cint is connected to a first end of the first switch Switchand the inverting input end of the operational amplifier 600. A secondend of the read-out capacitor Cint is connected to a second end of thefirst switch Switch and the output end of the operational amplifier 600.The output end of the operational amplifier 600 is also connected to aread-out line Readout. The read-out line Readout is configured to outputa light sensing signal.

In the present embodiment, the read-out capacitor Cint is an integratingcapacitor.

In the present embodiment, referring to FIG. 5 , the light sensingmodule 300 may further include a second storage capacitor C2. The secondstorage capacitor C2 includes a third electrode plate 83 and a fourthelectrode plate 84. The third electrode plate 83 is connected to theother one of the first control signal end GE1 or the second controlsignal end GE2. The fourth electrode plate 84 is connected to theread-out module 400. For example, referring to FIG. 5 , the thirdelectrode plate 83 is connected to the second control signal end GE2,and the fourth electrode plate 84 is connected to the read-out module400.

In the present embodiment, the first storage capacitor C1 and the secondstorage capacitor C2 are connected in parallel, that is, the capacitanceof the storage capacitors in the light sensing module 300 is a sum ofthe capacitance of the first storage capacitor C1 and the capacitance ofthe second storage capacitor C2. Compared to the structures shown inFIGS. 3 and 4 , the structure of FIG. 5 increases the capacitance of thestorage capacitors in the light sensing module 300. The storagecapacitors are mainly used to temporarily store the electric power ofphotocurrent generated after the light sensing transistor senses lightrays. An increase in capacitance of the storage capacitors improves thefault tolerance of leakage current generated by the light sensingtransistor and avoids mismatching between the storage capacitors andcorresponding leakage current.

FIG. 6 is a timing diagram of the light sensing module 300 in FIGS. 3 to5 . In the present embodiment, taking the structure of FIG. 5 forexample, the operations of the light sensing module 300 includes thefollowings.

In a first phase P1, the first control signal end GE1 supplies alow-level voltage signal to the first gate 31 of the dual-gatetransistor 500, and the second control signal end GE2 supplies ahigh-level voltage signal to the second gate 81 of the dual-gatetransistor 500. Since the dual-gate transistor 500 is an N-typetransistor, the switch transistor constituted by the first gate 31, thefirst electrode 61 and the second electrode 62 is in an open state andthe light sensing transistor constituted by the second gate 81, thefirst electrode 61 and the second electrode 62 is in a closed state. Thefirst electrode 61 of the dual-gate transistor 500 and the secondelectrode 62 of the dual-gate transistor 500 are conductive. The channelof the dual-gate transistor 500 generates a photo-induced leakagecurrent for being irradiated by light rays and generates differentmagnitudes of leakage currents based on light intensity.

In the present embodiment, the electrical signal of the firstpower-supply line SVDD flows from the first electrode 61 of thedual-gate transistor 500 to the second electrode 62, and arrives at thesecond electrode plate 63 of the first storage capacitor C1 and thefourth electrode plate 84 of the second storage capacitor C2, andchanges based on the photo-induced leakage current generated by thedual-gate transistor 500.

In the present embodiment, the first electrode plate 33 of the firststorage capacitor C1 is connected to the first control signal end GE1,and the third electrode plate 83 of the second storage capacitor C2 isconnected to the second control signal end GE1. Therefore, the firststorage capacitor C1 and the second storage capacitor C2 are in acharging state, and the electrical signals charging the two capacitorsinclude light sensing signals.

In addition, in the first phase P1, the first switch Switch is in anopen state.

In a second phase P2, the first control signal end GE1 supplies ahigh-level voltage signal to the first gate 31 of the dual-gatetransistor 500, and the second control signal end GE2 supplies alow-level voltage signal to the second gate 81 of the dual-gatetransistor 500. Since the dual-gate transistor 500 is an N-typetransistor, the switch transistor constituted by the first gate 31, thefirst electrode 61 and the second electrode 62 is in a closed state andthe light sensing transistor constituted by the second gate 81, thefirst electrode 61 and the second electrode 62 is in an open state. Atthis time, the first storage capacitor C1 and the second storagecapacitors C2 release the electric charges stored in the first phase P1and transfer them to the read-out module 400.

In the second phase P2, the first switch Switch is closed, and theelectric charges released by the first storage capacitor C1 and thesecond storage capacitor C2 will be transferred to the read-outcapacitor Cint. In subsequent stages, the electrical signals stored inthe read-out capacitor Cint will be read by external read-out lineReadout.

In the present application, the dual-gate transistor 500 including thefirst gate 31 and the second gate 81, and the source and the drainsharing a common active layer 50 is provided on the display panel 200.The dual-gate transistor 500 can realize the functions of the lightsensing transistor and the switch transistor in different time periods.This reduces the area of the light sensing module 300 and improves theaperture ratio of the display panel 200.

The film structure of the light sensing module 300 of the presentapplication will now be described with reference to specificembodiments.

FIGS. 7-9 are cross-sectional views of the light sensing module 300 inthe display panel 200 of the present application. The display panel 200may include a substrate 10 and a thin-film transistor layer 20 locatedon the substrate 10.

In the present embodiment, the substrate 10 can be made of glass,quartz, or polyimide. The thin-film transistor layer 20 includes aplurality of thin-film transistors.

In the present embodiment, the thin-film transistor may be of an etchstop (ESL) type or a back channel etch (BCE) type, which are notspecifically limited in the present embodiment.

In the display panel 200 of the present application, referring to FIGS.7 to 9 , the thin-film transistor layer 20 may include the followings.

A first metal layer 30: the first metal layer 30 is disposed on thesubstrate 10. The first metal layer 30 may include a plurality of gatelines and the first gate 31 forming the dual-gate transistor 500. Thematerial of the first metal layer 30 may be copper, molybdenum, ormolybdenum-titanium alloy.

A first gate insulating layer 40: the first gate insulating layer 40 isdisposed on the first metal layer 30 and the first gate insulating layer40 covers the first metal layer 30 such that the first metal layer 30and a conductive layer on the first gate insulating layer 40 areseparate. The material of the first gate insulating layer 40 may besilicon oxide or the like.

An active layer 50: the active layer 50 is disposed on the first gateinsulating layer 40. The material of the active layer 50 may be IndiumGallium Zinc Oxide (IGZO), a-Si (Amorphous Silicon) or low-temperaturepolysilicon (LTPS). For example, the active layer 50 in FIGS. 7 to 9 isa-Si.

A second metal layer 60: the second metal layer 60 is disposed on theactive layer 50. The second metal layer 60 may include a plurality ofdata lines, drains, sources, etc. The source is the first electrode 61of the dual-gate transistor 500, and the drain is the second electrode62 of the dual-gate transistor 500. The drain and the source camp at twosides of the active layer 50 such that a middle channel portion of theactive layer 50 is not shielded by a light-shielding metal layer. Thematerial of the second metal layer 60 may be copper/molybdenum titaniumalloy, copper/titanium, and so on.

A second gate insulating layer 40: the second gate insulating layer 70is disposed on the second metal layer 60 and the second gate insulatinglayer 70 covers the second metal layer 60 such that the second metallayer 60 and a conductive layer on the second gate insulating layer 70are separate. The material and thickness of the second gate insulatinglayer 70 may be as the same as those of the first gate insulating layer40.

A third metal layer 80: the third metal layer 80 is disposed above thesecond metal layer 60. The third metal layer 80 may include a pixelelectrode and the second gate 81 forming the dual-gate transistor 500.Since the second gate 81 is close to a light exit side of the displaypanel 200, light rays will have to pass through the second gate 81 so asto irradiate at the active layer 50 of the dual-gate transistor 500 togenerate corresponding leakage current. Therefore, the material of thesecond gate 81 needs to be a transparent material such that the lightrays can penetrate the second gate 81 to arrive at the active layer 50.The material of the third metal layer 80 may be indium tin oxide (ITO).

A protection layer 90: the protection layer 90 is disposed on the thirdmetal layer and the protection layer 90 covers the third metal layer 80.The material of the protection layer 90 may be an inorganic compoundconsisted of nitrogen, oxygen and silicon, or an organic material withcertain flatness.

In the present embodiment, the first gate 31, the active layer 50, thefirst electrode 61 and the second electrode 62 may constitute the switchtransistor, and the second gate 81, the active layer 50, the firstelectrode 61 and the second electrode 62 may constitute the lightsensing transistor. The light sensing transistor and the switchtransistor share the active layer 50, the first electrode 61 and thesecond electrode 62 such that a combination of the light sensingtransistor and the switch transistor forms the dual-gate transistor 500with both light sensing and switching functions. This reduces the areaof the light sensing module 300 and improves the aperture ratio of thedisplay panel 200.

In the display panel 200 of the present application, referring to FIGS.7 and 8 , the display panel 200 further includes the first storagecapacitor C1. The first electrode plate 33 and one of the first metallayer 30 or the third metal layer 80 are disposed in a same layer, andthe second electrode plate 63 and the second metal layer 60 are disposedin a same layer.

Please refer to FIG. 7 . The structure shown in FIG. 7 corresponds tothe structure of FIG. 3 .

In the present embodiment, the first electrode plate 33 of the firststorage capacitor C1 and the first metal layer 30 are disposed in a samelayer, and the second electrode plate 63 of the first storage capacitorC1 and the second metal layer 60 are disposed in a same layer. That is,in the process of patterning the first metal layer 30, the firstelectrode plate 33 is also formed while the first gate 31 is formed. Inaddition, the second electrode plate 63 is also formed while the drainand the source are formed. This simplifies the manufacturing processesof the first storage capacitor C1.

Please refer to FIG. 8 . The structure shown in FIG. 8 corresponds tothe structure of FIG. 4 .

In the present embodiment, the first electrode plate 33 of the firststorage capacitor C1 and the third metal layer 80 are disposed in a samelayer, and the second electrode plate 63 of the first storage capacitorC1 and the second metal layer 60 are disposed in a same layer. That is,in the process of patterning the third metal layer 80, the firstelectrode plate 33 is also formed while the pixel electrode is formed.In addition, the second electrode plate 63 is also formed while thedrain and the source are formed. This simplifies the manufacturingprocesses of the first storage capacitor C1.

In the display panel 200 of the present application, the display panel200 further includes the second storage capacitor C2, and the thirdelectrode plate 83 of the second storage capacitor C2 and the other oneof the first metal layer 30 or the third metal layer 80 can be disposedin a same layer, and the fourth electrode plate 84 of the second storagecapacitor C2 and the second electrode plate 63 can be shared.

Please refer to FIG. 9 . The structure shown in FIG. 9 corresponds tothe structure of FIG. 5 .

In the present embodiment, the present application combines thestructures of FIG. 7 and FIG. 8 , that is, the second storage capacitorC2 is added to the light sensing module 300 such that the first storagecapacitor C1 and the second storage capacitor C2 are connected inparallel. In FIG. 9 , the third electrode plate 83 of the second storagecapacitor C2 and the third metal layer 80 are disposed in a same layer,that is, in the process of patterning the third metal layer 80, thethird electrode plate 83 is also formed while the pixel electrode isformed. In addition, the fourth electrode plate 84 of the second storagecapacitor C2 and the second electrode plate 63 of the first storagecapacitor C1 are shared.

In the present embodiment, from the perspective of top view of thedisplay panel 200, the first electrode plate 33, the second electrodeplate 63 and the third electrode plate 83 are stacked such that anadditional storage capacitor is added under the circumstance that a samearea is occupied by the storage capacitor in a corresponding sub-pixel.This increases the capacitance of the storage capacitor.

In the present embodiment, for the first storage capacitor C1 and thesecond storage capacitor C2, the capacitance of the storage capacitorlocated away from the first metal layer 30 is greater than thecapacitance of the storage capacitor located close to the first metallayer 30. In the structure of FIG. 9 , since there are a large number ofgate lines and a plurality of gates in the first metal layer 30, thearea occupied by the first electrode plate 33 is relatively small. Incontrast, since it only needs to dispose corresponding pixel electrodesin the third metal layer 80, the area occupied by the third electrodeplate 83 may be relatively large. Because the capacitance of thecapacitor is positively correlated with the area of two electrodeplates, the capacitance of the first storage capacitor C1 of the presentapplication is smaller than the capacitance of the second storagecapacitor C2.

In the display panel 200 of the present application, the first gateinsulating layer 40 is disposed between the first electrode plate 33 andthe second electrode plate 63, and the second gate insulating layer 70is disposed between the second electrode plate 63 and the thirdelectrode plate 83. The first electrode plate 33, the first gateinsulating layer 40, the second electrode plate 63, the second gateinsulating layer 70 and the third electrode plate 83 are made oftransparent material.

In the present embodiment, since the storage capacitors also occupy acertain area in the sub-pixel. When the metal forming the first storagecapacitor C1 and the second storage capacitor C2 is a non-transparentmaterial, the area is a non-transparent area. However, in the presentapplication, the electrode plates forming the first storage capacitor C1and the second storage capacitor C2 and the dielectric materials betweenthe electrode plates are all configured as transparent material suchthat the light rays can pass through the area of the storage capacitors.This increases the aperture ratio of the sub-pixels.

In the display panel 200 of the present application, referring to FIGS.7 to 9 , the first metal layer 30 further includes a gate transmissionportion 32, which is disposed in a same layer as the first gate 31. Thesecond gate 81 is electrically connected to the gate transmissionportion 32 via a wire switching hole 82.

In the present embodiment, the second gate 81 is made of transparentmaterial with relatively high impedance, such as indium tin oxide. Inorder to reduce the impedance in transmitting the gate signals, thepresent application additionally arranges the gate transmission portion32 in the first metal layer 30. The gate signals of the gatetransmission section 32 are transmitted to the second gate 81 by meansof wire switching.

In the present embodiment, the wire switching hole 82 penetrates thefirst gate insulating layer 40 and the second gate insulating layer 70.

In the display panel 200 of the present application, the display panel200 can be divided into a display stage and a light sensing stage withinone frame. The light sensing module 300 is configured to operate in thelight sensing stage, and display unit is configured to operate in thedisplay stage. The display panel 200 having the light sensing module 300can realize touch sensing, fingerprint recognition, optical interactionover distance, and so on. Also, integrating the light sensing module 300into the display panel 200 can reduce the overall thickness of thedisplay panel 200.

The present application further provides a mobile terminal, including aterminal body and the afore-described display panel 200. The terminalbody and the display panel 200 are combined as one. The terminal bodymay be a circuit board or other devices bound to the display panel 200,and a cover plate covering the display panel 200, and so on. The mobileterminal may include electronic devices such as mobile phones,televisions, and notebook computers.

The present application provides a display panel and a mobile terminal.The display panel includes a light sensing module and a read-out moduleconnected to the light sensing module. The light sensing module includesa dual-gate transistor, including a first gate connected to a firstcontrol signal end and a second gate connected to a second controlsignal end, a first electrode of the dual-gate transistor connected to afirst power-supply end, a second electrode of the dual-gate transistorconnected to the read-out module. The light sensing module furtherincludes a first storage capacitor, a first electrode plate of the firststorage capacitor connected to one of the first control signal end orthe second control signal end, a second electrode plate of the firststorage capacitor connected to the read-out module. In the presentapplication, the dual-gate transistor including the first gate and thesecond gate, and the source and the drain sharing a common active layeris provided on the display panel. The dual-gate transistor can realizethe functions of the light sensing transistor and the switch transistorin different time periods. This reduces the area of the light sensingmodule and improves the aperture ratio of the display panel.

It should be understood that those of ordinary skill in the art may makeequivalent modifications or variations according to the technicalschemes and invention concepts of the present application, but all suchmodifications and variations should be within the appended claims of thepresent application.

1. A display panel, comprising a light sensing module and a read-outmodule connected to the light sensing module, the light sensing modulecomprising: a dual-gate transistor, comprising a first gate connected toa first control signal end and a second gate connected to a secondcontrol signal end, a first electrode of the dual-gate transistorconnected to a first power-supply end, a second electrode of thedual-gate transistor connected to the read-out module; and a firststorage capacitor, a first electrode plate of the first storagecapacitor connected to one of the first control signal end or the secondcontrol signal end, a second electrode plate of the first storagecapacitor connected to the read-out module.
 2. The display panel ofclaim 1, further comprising: a first metal layer, comprising the firstgate forming the dual-gate transistor; an active layer, disposed on thefirst metal layer; a second metal layer, disposed on the active layer,the second metal layer comprising the first electrode and the secondelectrode forming the dual-gate transistor; and a third metal layer,disposed above the second metal layer, the third metal layer comprisingthe second gate forming the dual-gate transistor.
 3. The display panelof claim 2, wherein the first electrode plate and one of the first metallayer or the third metal layer are disposed in a same layer, and thesecond electrode plate and the second metal layer are disposed in a samelayer.
 4. The display panel of claim 3, wherein the light sensing modulefurther comprises a second storage capacitor, and the second storagecapacitor comprising a third electrode plate and a fourth electrodeplate, wherein the third electrode plate is connected to the other oneof the first control signal end or the second control signal end, andthe fourth electrode plate is connected to the read-out module.
 5. Thedisplay panel of claim 4, wherein the third electrode plate and theother one of the first metal layer or the third metal layer are disposedin a same layer, and the fourth electrode plate and the second electrodeplate are shared.
 6. The display panel of claim 5, wherein among thefirst storage capacitor and the second storage capacitor, capacitance ofthe storage capacitor located away from the first metal layer is greaterthan capacitance of the storage capacitor located close to the firstmetal layer.
 7. The display panel of claim 5, further comprising: afirst gate insulating layer, disposed between the first metal layer andthe second metal layer; and a second gate insulating layer, disposedbetween the second metal layer and the third metal layer.
 8. The displaypanel of claim 5, wherein the first electrode plate, the first gateinsulating layer, the second electrode plate, the second gate insulatinglayer and the third electrode plate are made of transparent material. 9.The display panel of claim 2, wherein the first metal layer furthercomprises: a gate transmission portion, disposed in a same layer as thefirst gate, the second gate electrically connected to the gatetransmission portion via a wire switching hole.
 10. The display panelaccording to claim 1, wherein the read-out module comprises: anoperational amplifier, comprising an inverting input end, anon-inverting input end and an output end, the non-inverting input endconnected to a voltage comparing end, the inverting input end connectedto the second electrode of the dual-gate transistor and the secondelectrode plate of the first storage capacitor; a read-out capacitor,connected in parallel with the operational amplifier; and a firstswitch, connected in parallel with the operational amplifier and theread-out capacitor, wherein a first end of the read-out capacitor isconnected to a first end of the first switch and the inverting input endof the operational amplifier, and a second end of the read-out capacitoris connected to a second end of the first switch and the output end ofthe operational amplifier.
 11. A mobile terminal, comprising a terminalbody and a display panel, which are combined as one, the display panelcomprising a light sensing module and a read-out module connected to thelight sensing module, the light sensing module comprising: a dual-gatetransistor, comprising a first gate connected to a first control signalend and a second gate connected to a second control signal end, a firstelectrode of the dual-gate transistor connected to a first power-supplyend, a second electrode of the dual-gate transistor connected to theread-out module; and a first storage capacitor, a first electrode plateof the first storage capacitor connected to one of the first controlsignal end or the second control signal end, a second electrode plate ofthe first storage capacitor connected to the read-out module.
 12. Themobile terminal of claim 11, wherein the display panel furthercomprises: a first metal layer, comprising the first gate forming thedual-gate transistor; an active layer, disposed on the first metallayer; a second metal layer, disposed on the active layer, the secondmetal layer comprising the first electrode and the second electrodeforming the dual-gate transistor; and a third metal layer, disposedabove the second metal layer, the third metal layer comprising thesecond gate forming the dual-gate transistor.
 13. The mobile terminal ofclaim 12, wherein the first electrode plate and one of the first metallayer or the third metal layer are disposed in a same layer, and thesecond electrode plate and the second metal layer are disposed in a samelayer.
 14. The mobile terminal of claim 13, wherein the light sensingmodule further comprises a second storage capacitor, and the secondstorage capacitor comprising a third electrode plate and a fourthelectrode plate, wherein the third electrode plate is connected to theother one of the first control signal end or the second control signalend, and the fourth electrode plate is connected to the read-out module.15. The mobile terminal of claim 14, wherein the third electrode plateand the other one of the first metal layer or the third metal layer aredisposed in a same layer, and the fourth electrode plate and the secondelectrode plate are shared.
 16. The mobile terminal of claim 15, whereinamong the first storage capacitor and the second storage capacitor,capacitance of the storage capacitor located away from the first metallayer is greater than capacitance of the storage capacitor located closeto the first metal layer.
 17. The mobile terminal of claim 15, whereinthe display panel further comprises: a first gate insulating layer,disposed between the first metal layer and the second metal layer; and asecond gate insulating layer, disposed between the second metal layerand the third metal layer.
 18. The mobile terminal of claim 15, whereinthe first electrode plate, the first gate insulating layer, the secondelectrode plate, the second gate insulating layer and the thirdelectrode plate are made of transparent material.
 19. The mobileterminal of claim 12, wherein the first metal layer further comprises: agate transmission portion, disposed in a same layer as the first gate,the second gate electrically connected to the gate transmission portionvia a wire switching hole.
 20. The mobile terminal of claim 11, whereinthe read-out module comprises: an operational amplifier, comprising aninverting input end, a non-inverting input end and an output end, thenon-inverting input end connected to a voltage comparing end, theinverting input end connected to the second electrode of the dual-gatetransistor and the second electrode plate of the first storagecapacitor; a read-out capacitor, connected in parallel with theoperational amplifier; and a first switch, connected in parallel withthe operational amplifier and the read-out capacitor, wherein a firstend of the read-out capacitor is connected to a first end of the firstswitch and the inverting input end of the operational amplifier, and asecond end of the read-out capacitor is connected to a second end of thefirst switch and the output end of the operational amplifier.